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Journal of Applied Physics

Volumn 109, Issue 8, 2011, Pages

Built-in field control in alloyed c-plane III-N quantum dots and wells

(4) Caro, M A a,b Schulz, S a Healy, S B a O'Reilly, E P a,b

a UNIVERSITY COLLEGE CORK (Ireland)

b UNIVERSITY COLLEGE CORK (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY COMPOSITIONS; ALN; BAND GAPS; BUILT-IN POTENTIAL; DOT STRUCTURE; GAN EPILAYERS; IN-FIELD; MATERIAL PARAMETER; NONLINEAR EFFECT; PIEZOELECTRIC POLARIZATIONS; QUANTUM DOT; QUANTUM WELL; STRAIN LIMIT; WURTZITE GAN;

ALLOYING; ELECTRIC FIELDS; POLARIZATION; ZINC SULFIDE;

GALLIUM NITRIDE;

EID: 79955719609 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3563568 Document Type: Article

Times cited : (44)

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