III-nitride based deep ultraviolet light sources

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6894, Issue , 2008, Pages

  Shur, M S ^a,b   Gaska, R ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

AlGaN; Deep ultraviolet LEDs MEMOCVD ; GaN; Nitrides

Indexed keywords

CUBIC BORON NITRIDE; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; LIGHT; LIGHT SOURCES; LIGHTING; PIGMENTS; SEMICONDUCTING GALLIUM; ULTRAVIOLET RADIATION;

DEEP ULTRA VIOLET (DUV); DEEP UV (DUV); GROWTH PROCESSES; III NITRIDES; ME MOCVD; NITRIDE MATERIALS; OPTICAL INSTRUMENTATION;

NITRIDES;

EID: 42149132062     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.769128     Document Type: Conference Paper

References (13)

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2. R. Gaska, M. S. Shur, and J. Zhang, Physics and Applications of Deep UV LEDs, in 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. Piscataway: IEEE, 2006, vol. 2, ISBN 1-4244-0160-7
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6. R. Gaska, M. Shur, J. Zhang Heterostructure including light generating structure contained in potential well, publication No US-2007-0181869,08/09/2007
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