InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop

Applied Physics Letters

Volumn 97, Issue 1, 2010, Pages

  Zhang, Meng ^a   Bhattacharya, Pallab ^a   Guo, Wei ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; CURRENT INJECTIONS; GREEN LIGHT EMITTING DIODES; HIGH DENSITY; INGAN/GAN; INTERNAL QUANTUM EFFICIENCY; PIEZO-ELECTRIC FIELDS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; QUANTUM DOT; RECOMBINATION LIFETIME; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SELF-ORGANIZED; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES; TIME-RESOLVED PHOTOLUMINESCENCE;

CRYSTAL GROWTH; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM EFFICIENCY;

EID: 77954708130     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3460921     Document Type: Article

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