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Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 6, 2010, Pages 1305-1308

Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes

(6) Zhu, Mingwei a You, Shi a Detchprohm, Theeradetch a Paskova, Tanya b Preble, Edward A b Wetzel, Christian a

a Research Rensselaer Polytechnic Institute (United States)

b KYMA TECHNOLOGIES INC (United States)

Author keywords

Dislocations; Electroluminescence; GaInN GaN; LEDs; MOVPE

Indexed keywords

C-PLANE SUBSTRATES; DISLOCATION DENSITIES; DISLOCATION PAIRS; EMISSION WAVELENGTH; GAN SUBSTRATE; HIGH DENSITY; LOW DENSITY; MISFIT DISLOCATIONS; MOVPE; QUANTUM WELL; STRAIN RELAXATION MECHANISM; STRUCTURAL CHARACTERISTICS; THREADING DISLOCATION; V-DEFECTS; WAVELENGTH RANGES;

CRYSTAL GROWTH; EDGE DISLOCATIONS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; SAPPHIRE; STRAIN CONTROL; STRAIN RELAXATION; SUBSTRATES;

GALLIUM ALLOYS;

EID: 77954302301 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200983645 Document Type: Article

Times cited : (22)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.