메뉴 건너뛰기




Volumn 6669, Issue , 2007, Pages

Effect of spontaneous and piezoelectric polarization on the optical characteristics of blue light-emitting diodes

Author keywords

InGaN; Light emitting diode; Numerical simulation; Optical properties

Indexed keywords

PIEZOELECTRIC DEVICES; POLARIZATION; RADIATIVE TRANSFER; SEMICONDUCTOR QUANTUM WELLS;

EID: 42149102536     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.733860     Document Type: Conference Paper
Times cited : (9)

References (16)
  • 1
    • 17044400613 scopus 로고    scopus 로고
    • Polarization of III-nitride blue and ultraviolet light-emitting diodes
    • J. Shakya, K. Knabe, K. H. Kim, J. Li, J. Y. Lin, and H. X. Jiang, "Polarization of III-nitride blue and ultraviolet light-emitting diodes," Appl. Phys. Lett. 86, 091107-1-091107-3 (2005).
    • (2005) Appl. Phys. Lett , vol.86
    • Shakya, J.1    Knabe, K.2    Kim, K.H.3    Li, J.4    Lin, J.Y.5    Jiang, H.X.6
  • 2
    • 33646402963 scopus 로고    scopus 로고
    • Growth of III-nitride photonic structures on large area silicon substrates
    • J. Li, J. Y. Lin, and H. X. Jiang, "Growth of III-nitride photonic structures on large area silicon substrates," Appl. Phys. Lett. 88, 171909-1-171909-3 (2006).
    • (2006) Appl. Phys. Lett , vol.88
    • Li, J.1    Lin, J.Y.2    Jiang, H.X.3
  • 3
    • 31544440957 scopus 로고    scopus 로고
    • Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer
    • Y. A. Chang, C. Y. Luo, H. C. Kuo, Y. K. Kuo, C. F. Lin, and S. C. Wang, "Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer," Jpn. J. Appl. Phys. 44, 7916-7918 (2005).
    • (2005) Jpn. J. Appl. Phys , vol.44 , pp. 7916-7918
    • Chang, Y.A.1    Luo, C.Y.2    Kuo, H.C.3    Kuo, Y.K.4    Lin, C.F.5    Wang, S.C.6
  • 5
    • 79955984192 scopus 로고    scopus 로고
    • M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, Structural characterization of nonpolar (11 20̄) a-plane GaN thin films grown on (1 1̄0̄ 2) r-plane sapphire, Appl. Phys. Lett. 81, 469-471 (2002).
    • M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, "Structural characterization of nonpolar (11 20̄) a-plane GaN thin films grown on (1 1̄0̄ 2) r-plane sapphire," Appl. Phys. Lett. 81, 469-471 (2002).
  • 6
    • 1642337145 scopus 로고    scopus 로고
    • Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition
    • M. D. Craven, F. Wu, A. Chakraborty, B. Imer, U. K. Mishra, S. P. DenBaars, and J. S. Speck, "Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition, "Appl. Phys. Lett. 84, 1281-1283 (2004).
    • (2004) Appl. Phys. Lett , vol.84 , pp. 1281-1283
    • Craven, M.D.1    Wu, F.2    Chakraborty, A.3    Imer, B.4    Mishra, U.K.5    DenBaars, S.P.6    Speck, J.S.7
  • 9
    • 1242329860 scopus 로고    scopus 로고
    • Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells
    • M. D. Craven, P. Waltereit, J. S. Speck, and S. P. DenBaars, "Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells," Appl. Phys. Lett. 84, 496-498 (2004).
    • (2004) Appl. Phys. Lett , vol.84 , pp. 496-498
    • Craven, M.D.1    Waltereit, P.2    Speck, J.S.3    DenBaars, S.P.4
  • 10
    • 0000844988 scopus 로고    scopus 로고
    • Theory of GaN(10 1̄0̄) and (11 20̄) surfaces
    • J. E.Northrup and J. Neugebauer, "Theory of GaN(10 1̄0̄) and (11 20̄) surfaces," Phys. Rev. B 53, R10477-R10480 (1996).
    • (1996) Phys. Rev. B , vol.53
    • Northrup, J.E.1    Neugebauer, J.2
  • 13
    • 0141990606 scopus 로고    scopus 로고
    • Band parameters for nitrogen-containing semiconductors
    • I. Vurgaftman and J. R. Meyer, "Band parameters for nitrogen-containing semiconductors," J. Appl. Phys. 94, 3675-3696 (2003).
    • (2003) J. Appl. Phys , vol.94 , pp. 3675-3696
    • Vurgaftman, I.1    Meyer, J.R.2
  • 14
    • 79956053005 scopus 로고    scopus 로고
    • Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructure
    • V. Fiorentini, F. Bernardini, and O. Ambacher, "Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructure," Appl. Phys. Lett. 80, 1204-1206 (2002).
    • (2002) Appl. Phys. Lett , vol.80 , pp. 1204-1206
    • Fiorentini, V.1    Bernardini, F.2    Ambacher, O.3
  • 16
    • 79956006094 scopus 로고    scopus 로고
    • Quantiative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy
    • F. Renner, P. Kiesel, G H. Döhler, M. Kneissl, C. G. Van de Walle, and N. M. Johnson, "Quantiative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy," Appl. Phys. Lett. 81, 490-492 (2002).
    • (2002) Appl. Phys. Lett , vol.81 , pp. 490-492
    • Renner, F.1    Kiesel, P.2    Döhler, G.H.3    Kneissl, M.4    Van de Walle, C.G.5    Johnson, N.M.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.