Structural properties of MBE AlInN and AlGaInN barrier layers for GaN-HEMT structures

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 6, 2010, Pages 1338-1341

  Kirste, Lutz ^a   Lim, Taek ^a   Aidam, Rolf ^a   Müller, Stefan ^a   Waltereit, Patrick ^a   Ambacher, Oliver ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

High mobility; III V heterostructures; Interface formation; MBE; Structure; Transistors

Indexed keywords

ALGAINN; BARRIER LAYERS; CRYSTALLINE PERFECTION; GAN BUFFER; GAN HEMTS; HETEROSTRUCTURES; HIGH ELECTRON MOBILITY; HIGH MOBILITY; HIGH RESOLUTION X RAY DIFFRACTION; INTERFACE FORMATION; INTERFACE PROPERTY; INTERFACE QUALITY; LAYER THICKNESS; METALORGANIC CHEMICAL VAPOR DEPOSITION; STRUCTURAL PARAMETER; X RAY REFLECTIVITY;

CHEMICAL BEAM EPITAXY; CRYSTAL GROWTH; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; ORGANIC CHEMICALS; ORGANOMETALLICS; PHASE INTERFACES; SILICON CARBIDE; SINGLE CRYSTALS; TWO DIMENSIONAL ELECTRON GAS; X RAY DIFFRACTION;

STRUCTURAL PROPERTIES;

EID: 77954254843     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983501     Document Type: Article

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