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Journal of Applied Physics

Volumn 107, Issue 6, 2010, Pages

Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodes

(6) Lee, Wonseok a Kim, Min Ho b Zhu, Di c Noemaun, Ahmed N a Kim, Jong Kyu d Schubert, E F a

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

c Research Rensselaer Polytechnic Institute (United States)

d Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BLUE SHIFT; EXTERNAL QUANTUM EFFICIENCY; FORWARD VOLTAGE; GAINN/GAN MQW; HIGH INJECTION; INJECTION CURRENTS; LIGHT OUTPUT POWER; MULTIPLE QUANTUM WELLS; PEAK WAVELENGTH; PIT DENSITY; QUANTUM BARRIERS; REVERSE LEAKAGE CURRENT; SEPARATE CONFINEMENT; V-DEFECTS;

GALLIUM ALLOYS; GALLIUM NITRIDE; LATTICE MISMATCH; LEAKAGE (FLUID); LIGHT EMISSION; LIGHT EMITTING DIODES; POLARIZATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77950571870 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3327425 Document Type: Conference Paper

Times cited : (32)

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