Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures

Applied Physics Letters

Volumn 90, Issue 15, 2007, Pages

  Barletta, Philip T ^a   Berkman, E Acar ^a   Moody, Baxter F ^a   El Masry, Nadia A ^a   Emara, Ahmed M ^a   Reed, Mason J ^a   Bedair, S M ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER GROWTH; ELECTRICAL DATA; INJECTION CURRENT;

CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; GALLIUM NITRIDE; LIGHT EMISSION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 34247258352     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2721133     Document Type: Article

References (9)

1. F. A. Kish and R. M. Fletcher, in AlInGaP Light-Emitting Diodes, Semiconductors and Semimetals, Vol. 48, edited by G. B. Stringfellow and M. G. Craford (Academic, San Diego, 1997), p. 149.
2. Y. D. Qi, H. Liang, D. Wang, Z. D. Lu, W. Tang, and K. M. Lau, Appl. Phys. Lett. 86, 101903 (2005).
3. N. A. El-Masry, E. L. Piner, S. X. Liu, and S. M. Bedair, Appl. Phys. Lett. 72, 40 (1998).
4. G. Bastard, E. E. Mendez, L. L. Chang, and L. Esaki, Phys. Rev. B 28, 3241 (1983).
5. E. Acar Berkman, Ahmed M. Emara, Nadia A. El-Masry, and S. M. Bedair (to be submitted).
6. L. H. Peng, C. W. Shih, C. M. Lai, C. C. Chuo, and J. I. Chyi, Appl. Phys. Lett. 82, 4268 (2003).
7. B. Van Daele, G. Van Tendeloo, K. Jacobs, I. Moerman, and M. R. Leys, Appl. Phys. Lett. 85, 4379 (2004).
8. B. Damilano, N. Grandjean, J. Massies, L. Siozade, and J. Leymarie, Appl. Phys. Lett. 77, 1268 (2000).
9. X. A. Cao, E. B. Stokes, P. M. Sandvik, S. F. LeBoeuf, J. Kretchmer, and D. Walker, IEEE Electron Device Lett. 23, 535 (2002).