Progress in nitride semiconductors from GaN to InN - MOVPE growth and characteristics

Superlattices and Microstructures

Volumn 37, Issue 1, 2005, Pages 19-32

  Matsuoka, Takashi ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Band gap; Blue LED; Gallium nitride GaN; Indium nitride InN; Lattice matching substrate; MOVPE; Nitride semiconductors; Polarity

Indexed keywords

EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; LIQUID CRYSTAL DISPLAYS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; OPTICAL COMMUNICATION EQUIPMENT; ORGANOMETALLICS; SEMICONDUCTOR LASERS; SUBSTRATES;

BAND-GAPS; BLUE LED; GAN; INDIUM NITRIDE INN; LATTICE MATCHING SUBSTRATES; NITRIDE SEMICONDUCTORS; POLARITY;

SEMICONDUCTOR MATERIALS;

EID: 10644278741     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.06.003     Document Type: Article

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