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Volumn 96, Issue 13, 2010, Pages

Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells

(2) Schubert, Martin F a Schubert, E Fred a

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CAPTURE; CLASSICAL MODEL; DWELL TIME; ELECTRONS AND HOLES; HETERO-INTERFACES; HIGH PROBABILITY; NARROW QUANTUM WELLS; POLARIZATION CHARGES; QUANTUM TRANSMITTING BOUNDARY METHODS; QUANTUM WELL; SHEET CHARGES; WELL WIDTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77950509633 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3373610 Document Type: Article

Times cited : (41)

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