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Journal of Applied Physics

Volumn 105, Issue 1, 2009, Pages

Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting

(4) Wu, Yuh Renn a Lin, Yih Yin b Huang, Hung Hsun a Singh, Jasprit b

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b UNIVERSITY OF MICHIGAN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; DEVICE PERFORMANCE; DOT SIZE; ELECTRON HOLE; EMISSION SPECTRUMS; INGAN QUANTUM DOTS; INGAN QUANTUM WELLS; INJECTION CONDITIONS; K-P METHOD; LIGHT EMITTERS; QUANTUM DOT; QUANTUM DOT DEVICES; RADIATIVE LIFETIME; SELF-CONSISTENT METHOD; SOLID STATE LIGHTING; SPONTANEOUS POLARIZATION EFFECTS; SYSTEMATIC STUDY; VALENCE-FORCE FIELD MODEL; VISIBLE LIGHT; WHITE LIGHT;

EMISSION SPECTROSCOPY; LIGHT EMISSION; MODEL STRUCTURES; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 67649798213 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3065274 Document Type: Article

Times cited : (121)

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