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Journal of Applied Physics

Volumn 106, Issue 5, 2009, Pages

Effect of gas flow on the growth of In-rich AlInN films by metal-organic chemical vapor deposition

(5) Kang, Ting Ting a Yamamoto, Masatomo a Tanaka, Mikiyasu a Hashimoto, Akihiro a Yamamoto, Akio a

a UNIVERSITY OF FUKUI (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; CRYSTALLINE QUALITY; GAS FLOWS; METAL-ORGANIC; METALORGANIC CHEMICAL VAPOR DEPOSITION; PARASITIC REACTION; RAMAN SPECTRA; RESONANT EXCITATION; TRIMETHYLALUMINUM; TRIMETHYLINDIUM; TWO-MODE BEHAVIOR;

AERODYNAMICS; ALUMINUM; FLOW OF GASES; GAS PERMEABLE MEMBRANES; INDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; PHASE DIAGRAMS; PHASE MODULATION; RAMAN SPECTROSCOPY; VAPORS;

PHASE SEPARATION;

EID: 70349318585 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3212969 Document Type: Article

Times cited : (28)

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