Theory of GaN quantum dots for optical applications

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 4, 2009, Pages 1092-1103

  Williams, David P ^a   Schulz, Stefan ^b   Andreev, Aleksey D ^c   O'Reilly, Eoin P ^b  

^a Ireland   (Ireland)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Band structure; Nitrides; Polarization potential; Quantum dots (QDs); Quantum wells (QWs)

Indexed keywords

ARBITRARY SHAPE; BLUE SHIFT; BUILT-IN POTENTIAL; CARRIER DENSITY; DOT HEIGHT; ELECTROMECHANICAL EFFECTS; ELECTRONS AND HOLES; GAN QUANTUM DOTS; KEY FACTORS; NON-POLAR; NONPOLAR QUANTUM WELLS; OPTICAL APPLICATIONS; POLARIZATION POTENTIAL; POLARIZATION VECTORS; QUANTUM DOTS; QUANTUM DOTS (QDS); QUANTUM WELLS (QWS); RADIATIVE RECOMBINATION RATE; SURFACE INTEGRALS; WURTZITE HETEROSTRUCTURES;

BAND STRUCTURE; GALLIUM NITRIDE; HETEROJUNCTIONS; OPTICAL PROPERTIES; POLARIZATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; ZINC SULFIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70349438835     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2018828     Document Type: Article

References (43)

1. S. C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten, "III-nitrides: Growth, characterization, and properties," J. Appl. Phys., vol.87, no.3, pp. 965-1006, Feb. 2000.
2. F. Widmann, J. Simon, D. Daudin, G. Feuillet, J. L. Rouviere, N. T. Pelekanos, and G. Fishman, "Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect," Phys. Rev. B, vol.58, no.24, pp. 15989-15992, Dec. 1998.
3. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum-Dot Het-erostructures. Chichester, U.K.: Wiley, 1999.
4. P. Harrison, Quantum Wells, Wires and Dots: Theoretical and Computational Physics. Chichester, U.K.: Wiley, 2000.
5. A. D. Andreev and E. P. O'Reilly, "Theory of the electronic structure of GaN/AIN hexagonal quantum dots," Phys. Rev. B, vol.62, no.23, pp. 15851-15870, Dec. 2000.
6. S. Schulz, S. Schumacher, and G. Czycholl, "Tight-binding model for semiconductor quantum dots with a wurtzite crystal structure: From one-particle properties to Coulomb correlations and optical spectra," Phys. Rev. B, vol.73, no.24, pp. 245327-1-245327-15, Jun. 2006.
7. G. Bester and A. Zunger, "Cylindrically shaped zinc-blende semiconductor quantum dots do not have cylindrical symmetry: Atomistic symmetry, atomic relaxation, and piezoelectric effects," Phys. Rev. B, vol.71, pp. 045318-1-045318-12, Jan. 2005.
8. I. Vurgaftman and J. R. Meyer, "Band parameters for nitrogen-containing semiconductors," J. Appl. Phys., vol.94, no.6, pp. 3675-3696, Sep. 2003.
9. D. O. Kundys, J.-P. R. Wells, A. D. Andreev, S. A. Hashemizadeh, T. Wang, P. J. Parbrook, A. M. Fox, D. J. Mowbray, and M. S. Skolnick, "Resolution of discrete excited states in Inx Ga1 - x N multiple quantum wells using degenerate four-wave mixing," Phys. Rev. B, vol.73, pp. 165309-1-165309-5, Apr. 2006.
10. S. L. Chuang and C. S. Chang, "k p method for strained wurtzite semiconductors," Phys. Rev. B, vol.54, no.4, pp. 2491-2504, 1996.
11. M. Winkelnkemper, R. Seguin, S. Rodt, A. Schilwa, L. Reiszlig;mann, A. Strittmatter, A. Hoffmann, and D. Bimberg, "Polarised emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots," J. Appl. Phys., vol.101, no.11, pp. 113708-1-113708-4, Jun. 2007.
12. A. D. Andreev and E. P. O'Reilly, "Theoretical study of the electronic structure of self-organized GaN/AlN QDs," Nanotechnology, vol.11, pp. 256-262, Sep. 2000.
13. L. D. Landau and E. M. Lifshits, Theoretical Physics, vol.VIII, Electrodynamics of Continuous Media (in Russian). Moscow, Russia: Nauka, 1982, p. 104 (Transl.: L. D. Landau, L. P. Pitaevskii, and E. M. Lifshitz, Electrodynamics of Continuous Media: Volume 8 (Course of Theoretical Physics), 2nd ed. Oxford, U.K.: Elsevier/Butterworth/Heinemann, 1984).
14. U. M. E. Christmas, A. D. Andreev, and D. A. Faux, "Calculation of electric field and optical transitions in InGaN/GaN," J. Appl. Phys., vol.98, no.7, pp. 073522-1-073522-12, Oct. 2005.
15. D. P. Williams, A. D. Andreev, E. P. O'Reilly, and D. A. Faux, "Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots," Phys. Rev. B, vol.72, no.23, pp. 235318-1-235318-10, Dec. 2005.
16. N. Garro, A. Cros, J. A. Budagosky, A. Cantarero, A. Vinattieri, M. Gu-rioli, S. Founta, H. Mariette, and B. Daudin, "Reduction of the internal electric field in wurtzite a-plane GaN self-assembled quantum dots," Appl. Phys. Lett., vol.87, pp. 011101-1-011101-3, Jun. 2005.
17. S. Founta, F. Rol, E. Bellet-Amalric, J. Bleuse, B. Daudin, B. Gayral, H. Mariette, and C. Moisson, "Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy," Appl. Phys. Lett., vol.86, pp. 171901-1-171901-3, Apr. 2005.
18. S. Founta, F. Rol, E. Bellet-Amalric, E. Sarigiannidou, B. Gayral, C. Mois-son, H. Mariette, and B. Daudin, "Growth of GaN quantum dots on non-polar a-plane SiC by molecular-beam epitaxy," Phys. Stat. Sol. (b), vol.243, pp. 3968-3971, Dec. 2006.
19. S. Founta, J. Coraux, D. Jalabert, C. Bougerol, F. Rol, H. Mariette, H. Renevier, B. Daudin, R. A. Oliver, C. J. Humphreys, T. C. Q. Noakes, and P. Bailey, "Anisotropic strain relaxation in a-plane GaN quantum dots," J. Appl. Phys., vol.101, pp. 063541-1-063541-7, Mar. 2007.
20. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ram-steiner, M. Reiche, and K. H. Ploog, "Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes," Nature, vol.406, no.6798, pp. 865-868, Aug. 2000.
21. M. Grundmann, O. Stier, and D. Bimberg, "InAs/GaAs pyramidal quantum dots-Strain distribution, optical phonons and electronic structure," Phys. Rev. B, vol.52, no.16, pp. 11969-11981, Oct. 1995.
22. M. Winkelnkemper, A. Schliwa, and D. Bimberg, "Interrelation of structural and electronic properties in Inx Ga1 - x N/GaN quantum dots using an eight-band k.p model," Phys. Rev. B, vol.74, no.15, pp. 155322-1-155322-12, Oct. 2006.
23. O. Stier, M. Grundmann, and D. Bimberg, "Electronic and optical properties of strained quantum dots modeled by 8-band k.p theory," Phys. Rev. B, vol.59, no.8, pp. 5688-5701, Feb. 1999.
24. A. D. Andreev, J. R. Downes, D. A. Faux, and E. P. O'Reilly, "Strain distributions in quantum dots of arbitrary shape," J. Appl. Phys., vol.86, no.1, pp. 297-305, Jul. 1999.
25. A. D. Andreev, J. R. Downes, and E. P. O'Reilly, "The effects of adjacent dislocations on the electronic and optical properties of GaN/AlN quantum dots," Phys. E, vol.13, no.2-4, pp. 1094-1097, Mar. 2002.
26. A. D. Andreev and E. P. O'Reilly, "Optical matrix element in InAs/GaAs quantum dots: Dependence on quantum dot parameters," Appl. Phys. Lett., vol.87, no.21, pp. 213106-1-213106-3, Nov. 2005.
27. L. E. Vorobjev, D. A. Firsov, V. A. Shalygin, N. K. Fedosov, V. Y. Panevin, A. Andreev, V. M. Ustinov, G. E. Cirlin, V. A. Egorov, A. A. Tonkikh, F. Fossard, M. Tchernycheva, K. Moumanis, F. H. Julien, S. Hanna, A. Seilmeier, and H. Sigg, "Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells," Semicond. Sci. Technol., vol.21, pp. 1341-1347, Jan. 2005.
28. J. R. Downes, D. A. Faux, and E. P. O'Reilly, "A simple method for calculating strain distributions in quantum dot structures," J. Appl. Phys., vol.81, no.10, pp. 6700-6702, May 1997.
29. J. H. Davies, "Elastic and piezoelectric fields around a buried quantum dot: A simple picture," J. Appl. Phys., vol.84, no.3, pp. 1358-1365, Aug. 1998.
30. D. P. Williams, A. D. Andreev, and E. P. O'Reilly, "Dependence of exciton energy on dot size in GaN/AlN quantum dots," Phys. Rev. B, vol.73, no.24, pp. 241301-1-241301-4, Jun. 2006.
31. D. P. Williams, A. D. Andreev, and E. P. O'Reilly, "Self-consistent calculations of exciton, biexciton and charged exciton energies in InGaN/GaN quantum dots," Superlattices Microstructures, vol.36, no.4-6, pp. 791-798, Oct.-Dec. 2004.
32. J. Simon, N. T. Pelekanos, C. Adelmann, E. Martinez-Guerrero, R. Andre, B. Daudin, L. S. Dang, and H. Mariette, "Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots," Phys. Rev. B, vol.68, no.3, pp. 035312-1-035312-7, Jul. 2003.
33. A. D. Andreev and E. P. O'Reilly, "Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots," Appl. Phys. Lett., vol.79, no.4, pp. 521-523, 2001.
34. A. F. Jartour, R. A. Oliver, A. Tahraoui, M. J. Kappers, C. J. Humphreys, and R. A. Taylor, "Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot," Phys. Rev. Lett., vol.99, no.19, pp. 197403-1-197403-4, Nov. 2007.
35. H. Schomig, S. Halm, A. Forchel, G. Bacher, J. Off, and F. Scholz, "Probing individual localization centers in an InGaN/GaN quantum well," Phys. Rev. Lett., vol.92, no.10, pp. 106802-1-106802-4, Mar. 2004.
36. R. Seguin, S. Rodt, A. Strittmatter, L. Reiszlig;mann, T. Bartel, A. Hoffmann, D. Bimberg, E. Hahn, and D. Gerthsen, "Multi-excitonic complexes in single InGaN quantum dots," Appl. Phys. Lett., vol.84, no.20, pp. 4023-4025, May 2004.
37. K. Butcher and T. Tansley, "InN, latest development and a review of the band-gap controversy," Superlattices Microstructures, vol.38, no.1, pp. 1-37, May 2005.
38. S. Muensit, E. M. Goldys, and I. L. Guy, "Shear piezoelectric coefficients of gallium nitride and aluminum nitride," Appl. Phys. Lett., vol.75, no.25, pp. 3965-3967, Dec. 1999. (Pubitemid 129564937)
39. F. Bernardini and V. Fiorentini, "First-principles calculation of the piezo-electric tensor d of III-V nitrides," Appl. Phys. Lett., vol.80, no.22, pp. 4145-4147, Jun. 2002.
40. K. Tsubouchi and N. Mikoshiba, "Zero-temperature-coefficient SAW devices on AlN epitaxial films," IEEE Trans. Sonics Ultrason., vol.SU-32, no.5, pp. 634-644, Sep. 1985. (Pubitemid 16508778)
41. G. Bu, D. Ciplys, M. S. Shur, L. J. Schowalter, S. Schujman, and R. Gaska, "Electromechanical coupling coefficient for surface acoustic waves in single-crystal bulk aluminum nitride," Appl. Phys. Lett., vol.84, no.23, pp. 4611-4613, Jun. 2004.
42. K. Shimada, "First-principles determination of piezoelectric stress and strain constants of wurtzite III-V nitrides," Jpn. J. Appl. Phys., vol.45, no.12-16, pp. L358-L360, Apr. 2006.
43. S. Schulz, A. Berube, and E. P. O'Reilly, "Polarization fields in nitride-based quantum dots grown on non-polar substrates," Phys. Rev. B., vol.79, pp. 081401(R)-1-081401(R)-4, Feb. 2009.