Theory of GaN quantum dots for optical applications

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 4, 2009, Pages 1092-1103

  Williams, David P ^a   Schulz, Stefan ^b   Andreev, Aleksey D ^c   O'Reilly, Eoin P ^b  

^a Department of Chemistry   (Ireland)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Band structure; Nitrides; Polarization potential; Quantum dots (QDs); Quantum wells (QWs)

Indexed keywords

ARBITRARY SHAPE; BLUE SHIFT; BUILT-IN POTENTIAL; CARRIER DENSITY; DOT HEIGHT; ELECTROMECHANICAL EFFECTS; ELECTRONS AND HOLES; GAN QUANTUM DOTS; KEY FACTORS; NON-POLAR; NONPOLAR QUANTUM WELLS; OPTICAL APPLICATIONS; POLARIZATION POTENTIAL; POLARIZATION VECTORS; QUANTUM DOTS; QUANTUM DOTS (QDS); QUANTUM WELLS (QWS); RADIATIVE RECOMBINATION RATE; SURFACE INTEGRALS; WURTZITE HETEROSTRUCTURES;

BAND STRUCTURE; GALLIUM NITRIDE; HETEROJUNCTIONS; OPTICAL PROPERTIES; POLARIZATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; ZINC SULFIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70349438835     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2018828     Document Type: Article

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