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Volumn 95, Issue 24, 2009, Pages

Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers

(11) Chung, Hun Jae a Choi, Rak Jun a Kim, Min Ho a Han, Jae Woong a Park, Young Min a Kim, Yu Seung a Paek, Ho Sun a Sone, Cheol Soo a Park, Yong Jo a Kim, Jong Kyu b Schubert, E Fred c

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

b Pohang University of Science and Technology (POSTECH) (South Korea)

c RENSSELAER POLYTECHNIC INSTITUTE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE APPROACH; BARRIER STRUCTURES; BLUE LIGHT EMITTING DIODES; CLADDING LAYER; EXTERNAL QUANTUM EFFICIENCY; INGAN/GAN; MULTILAYER BARRIERS; OPTICAL POWER; OPTICAL POWER MEASUREMENTS; PACKAGED DEVICE; POLARIZATION FIELD; POLARIZATION MATCHING; SINGLE LAYER; TIME-RESOLVED PHOTOLUMINESCENCE;

GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; MULTILAYERS;

POLARIZATION;

EID: 77954479139 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3276066 Document Type: Article

Times cited : (44)

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