Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers

Applied Physics B: Lasers and Optics

Volumn 95, Issue 1, 2009, Pages 145-153

  Chen, J R ^a   Ling, S C ^a   Huang, H M ^a   Su, P Y ^a   Ko, T S ^a   Lu, T C ^a   Kuo, H C ^a   Kuo, Y K ^b   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; DIODES; LASERS; OPTICAL PROPERTIES; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

ALINGAN; ALUMINUM COMPOSITIONS; BARRIER LAYERS; DEVICE SIMULATIONS; ELECTRON HOLES; INGAN QUANTUM WELLS; LASER DIODES; MULTI-QUANTUM WELLS; NUMERICAL STUDIES; OPTIMAL POLARIZATIONS; POLARIZATION CHARGES; QUANTUM-WELL STRUCTURES; SIMULATION RESULTS; SLOPE EFFICIENCIES; THRESHOLD CURRENTS;

POLARIZATION;

EID: 62949171537     PISSN: 09462171     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00340-008-3331-9     Document Type: Article

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