Si-Sb-Te materials for phase change memory applications

Nanotechnology

Volumn 22, Issue 14, 2011, Pages

  Rao, Feng ^a   Song, Zhitang ^a   Ren, Kun ^a   Zhou, Xilin ^a   Cheng, Yan ^a   Wu, Liangcai ^a   Liu, Bo ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; AUTOMOTIVE ELECTRONICS; DATA RETENTION; DATA STORAGE; ELECTRICAL PERFORMANCE; LONG-TERM OPERATION; PCRAM CELLS; PHASE CHANGE RANDOM ACCESS MEMORY; SI CONTENT; THERMAL STABILITY;

AUTOMOBILE ELECTRONIC EQUIPMENT; GERMANIUM; PHASE CHANGE MEMORY; RANDOM ACCESS STORAGE; SILICON COMPOUNDS;

SILICON;

EID: 79952653397     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/14/145702     Document Type: Article

References (42)

1. Im D H et al 2008 Tech. Dig. Int. Electron Devices Meet. p211
2. Atwood G 2008 Science 321 210
3. Yamada N, Ohno E, Nishiuchi K, Akahira N and Takao M 1991 J. Appl. Phys. 69 2849
4. Friedrich I, Weidenhof V, Njoroge W, Franz P and Wuttig M 2000 J. Appl. Phys. 87 4130
5. Takaura N, Terao M, Kurotsuchi K, Yamauchi T, Tonomura O, Hanaoka Y, Takemura R, Osada K, Kawahara T and Matsuoka H 2003 Tech. Dig. Int. Electron Devices Meet. p897
6. Qiao B, Feng J, Lai Y, Cai Y, Lin Y, Tang T, Cai B and Chen B 2006 Semicond. Sci. Technol. 21 1073
7. Song W D, Shi L P, Miao X S and Chong T C 2007 Appl. Phys. Lett. 90 091904
8. Chen S F, Chen J K and Chen T P 2008 Mater. Sci. Technol. 24 501
9. Gu Y, Song Z, Zhang T, Liu B and Feng S 2010 Solid-State Electron. 54 443
10. Milliron D J, Raoux S, Shelby R M and Jordan-Sweet J 2007 Nat. Mater. 6 352
11. Nakayama K, Kojima K, Imai Y, Kasai T, Fukushima S, Kitagawa A, Kumeda M, Kakimoto Y and Suzuki M 2003 Japan. J. Appl. Phys. 42 404
12. Qiao B, Feng J, Lai Y, Cai Y, Lin Y, Tang T, Cai B and Chen B 2007 J. Electron. Mater. 36 88
13. Zhang T, Song Z, Liu B, Feng S and Chen B 2007 Japan. J. Appl. Phys. 46 L70
14. Zhang T, Cheng Y, Song Z, Liu B, Feng S, Han X, Zhang Z and Chen B 2008 Scr. Mater. 58 977
15. Feng J, Zhang Z, Zhang Y, Cai B, Lin Y, Tang T and Chen B 2007 J. Appl. Phys. 101 074502
16. Cheng Y, Han X, Liu X, Zheng K, Zhang Z, Zhang T, Song Z, Liu B and Feng S 2008 Appl. Phys. Lett. 93 183113
17. Cabral C, Chen K N, Krusin-Elbaum L and Deline V 2007 Appl. Phys. Lett. 90 051908
18. Krusin-Elbaum L, Cabral C, Chen K N, Copel M, Abraham D W, Bruley J and Deline V R 2007 Appl. Phys. Lett. 90 141902
19. Zhou X, Wu L, Song Z, Rao F, Liu B, Yao D, Yin W, Li J, Feng S and Chen B 2009 Appl. Phys. Express 2 091401
20. Liu Y et al 2009 Japan. J. Appl. Phys. 48 101601
21. Ploog K, Stetter W, Nowitzki A and Schönherr E 1976 Mater. Res. Bull. 11 1147
22. Shportko K, Kremers S, Woda M, Lencer D, Robertson J and Wuttig M 2008 Nat. Mater. 7 653
23. Lencer D, Salinga M, Grabowski B, Hickel T, Neugebauer J and Wuttig M 2008 Nat. Mater. 7 972
24. Da Silva J L F, Walsh A and Lee H 2008 Phys. Rev. B 78 224111
25. Asokan S, Parthasarathy G and Gopal E S R 1985 J. Mater. Sci. Lett. 4 502
26. Chung K, Wamwangi D, Woda M, Wuttig M and Bensch W 2008 J. Appl. Phys. 103 083523
27. Lee B, Abelson J R, Bishop S G, Kang D, Cheong B and Kim K 2005 J. Appl. Phys. 97 093509
28. Zhang Y, Feng J, Zhang Z, Cai B, Lin Y, Tang T and Chen B 2008 Appl. Surf. Sci. 254 5602
29. Park J, Eom S H, Lee H, Da Silva J L F, Kang Y, Lee T and Khang Y H 2009 Phys. Rev. B 80 115209
30. Pirovano A, Lacaita A L, Benvenuti A, Pellizzer F and Bez R 2004 IEEE Trans. Electron Devices 51 452
31. Kooi B J and De Hosson J Th M 2004 J. Appl. Phys. 95 4714
32. Choi Y, Jung M and Lee Y 2009 Electrochem. Solid-State Lett. 12 F17
33. Wei X, Shi L, Chong T, Zhao R and Lee H K 2007 Japan. J. Appl. Phys. 46 2211
34. Kao K F, Lee C M, Chen M J, Tsai M J and Chin T S 2009 Adv. Mater. 21 1695
35. Zhang T, Song Z, Liu B, Liu W, Feng S and Chen B 2007 Chin. Phys. 16 2475
36. Njoroge W K, Woltgens H W and Wuttig M 2002 J. Vac. Sci. Technol. A 20 230
37. Jeong J, Ahn H, Lee S, Kim W M, Ha J and Cheong B 2009 Appl. Phys. Lett. 94 011902
38. Rao F, Song Z, Gong Y, Wu L, Feng S and Chen B 2008 Nanotechnology 19 445706
39. Chao D S, Lien C, Lee C M, Chen Y C, Yeh J T, Chen F, Chen M J, Yen P H, Kao M J and Tsai M J 2008 Appl. Phys. Lett. 92 062108
40. Hong S and Lee H 2008 Japan. J. Appl. Phys. 47 3372
41. Redaelli A, Pirovano A, Pellizzer F, Lacaita A L, Ielmini D and Bez R 2004 IEEE Electron Device Lett. 25 684
42. Volz S, Feng X, Fuentes C, Guérin P and Jaouen M 2002 Int. J. Thermophys. 23 1645