Crystallization process and amorphous state stability of Si-Sb-Te films for phase change memory

Journal of Applied Physics

Volumn 101, Issue 7, 2007, Pages

  Feng, J ^a   Zhang, Z F ^a   Zhang, Y ^a   Cai, B C ^a   Lin, Y Y ^b   Tang, T A ^b   Chen, Bomy ^c  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b FUDAN UNIVERSITY   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS STATE STABILITY; CRYSTALLINE RESISTIVITY; CRYSTALLIZATION TEMPERATURE; FILM RESISTANCE;

ACTIVATION ENERGY; CHEMICAL STABILITY; CONCENTRATION (PROCESS); CRYSTALLIZATION; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

AMORPHOUS FILMS;

EID: 34247264409     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2717562     Document Type: Article

References (17)

1. S. Lai and T. Lowrey, Tech. Dig. - Int. Electron Devices Meet. 2001, 803 (2001).
2. A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, S. Hudgens, and R. Bez, Tech. Dig. - Int. Electron Devices Meet. 2003, 699 (2003).
3. S. Lai. Tech. Dig. - Int. Electron Devices Meet. 2003, 255 (2003).
4. F. Pellizzer et al., 2004 Symposium on VLSI Tech. Dig. of Tech. Papers, 2004, p. 18.
5. H. Horii et al., 2003 Symposium on VLSI Tech. Dig. of Tech. Papers, 12B-5, 2003, p. 177.
6. B. W. Qiao, J. Feng, Y. F. Lai, Y. Ling, Y. Y. Lin, T. A. Tang, B. C. Cai, and B. Chen, Appl. Surf. Sci. 252, 8404 (2006).
7. N. Matsuzaki et al., Tech. Dig. - Int. Electron Devices Meet. 2005, 738 (2005).
8. M. H. R. Lankhorst, L. Van Pieterson, M. Van Schijndel, A. J. B. Jacobs, and J. C.N. Rijpers, Jpn. J. Appl. Phys., Part 1 42, 863 (2003).
9. L. Van Pieterson, M. H. R. Lankhorst, M. Van Schijndel, A. E. T. Kuiper, and J. H. J. Roosen, J. Appl. Phys. 97, 083520 (2005).
10. M. H. R. Lankhorst, B. W. S. M. Ketelaars, and R. A. M. Wolters, Nat. Mater. 4, 347 (2005).
11. B. Qiao, J. Feng, Y. Lai, Y. Cai, Y. Lin, T.-A. Tang, B. Cai, and B. Chen, Semicond. Sci. Technol. 21, 1073 (2006).
12. S. Privitera, E. Rimini, C. Bongiorno, R. Zonca, A. Pirovano, and R. Bez, J. Appl. Phys. 94, 4409 (2003).
13. S. Privitera, E. Rimini, and R. Zonca, Appl. Phys. Lett. 85, 3044 (2004).
14. J. H. Coombs, A. P. J. M. Jongenelis, W. van Es-Spiekman, and B. A. J. Jacobs, J. Appl. Phys. 78, 4918 (1995).
15. C. Rivera-Rodríguez, E. Prokhorov, G. Trapaga, E. Morales-Sánchez, M. Hernandez-Landaverde, Yu. Kovalenko, and J. González-Hernández, J. Appl. Phys. 96, 1040 (2004).
16. H. Hermann, N. Mattern, S. Roth, and P. C. Uebele, Phys. Rev. B 56, 13888 (1997).
17. N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Takao, J. Appl. Phys. 69, 2849 (1991).