메뉴 건너뛰기




Volumn 46, Issue 4 B, 2007, Pages 2211-2214

Thickness dependent nano-crystallization in Ge2Sb 2Te5 films and its effect on devices

Author keywords

Line type PCRAM; Nano crystallization; Phase change material; Thickness dependent effect

Indexed keywords

CRYSTALLIZATION KINETICS; ELECTRIC CONDUCTIVITY; FILM THICKNESS; GERMANIUM COMPOUNDS; PHASE CHANGE MATERIALS; RANDOM ACCESS STORAGE;

EID: 34547871718     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2211     Document Type: Article
Times cited : (81)

References (17)
  • 13
    • 0001144047 scopus 로고    scopus 로고
    • M. Zacharias, J. Biasing, and P. Veit: Appl. Phys. Lett. 74 (1999) 2614.
    • M. Zacharias, J. Biasing, and P. Veit: Appl. Phys. Lett. 74 (1999) 2614.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.