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Volumn 46, Issue 4 B, 2007, Pages 2211-2214
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Thickness dependent nano-crystallization in Ge2Sb 2Te5 films and its effect on devices
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Author keywords
Line type PCRAM; Nano crystallization; Phase change material; Thickness dependent effect
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Indexed keywords
CRYSTALLIZATION KINETICS;
ELECTRIC CONDUCTIVITY;
FILM THICKNESS;
GERMANIUM COMPOUNDS;
PHASE CHANGE MATERIALS;
RANDOM ACCESS STORAGE;
CRYSTALLIZATION TEMPERATURE;
JOHNSON-MEHL-AVARAMI (JMA) MODELS;
THICKNESS-DEPENDENT EFFECTS;
NANOCRYSTALLIZATION;
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EID: 34547871718
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.46.2211 Document Type: Article |
Times cited : (81)
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References (17)
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