Effect of heating rate on the activation energy for crystallization of amorphous Ge2Sb2Te5 thin film

Electrochemical and Solid-State Letters

Volumn 12, Issue 7, 2009, Pages

  Choi, Yunjung ^a   Jung, Minsu ^a   Lee, Young Kook ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE ACTIVATION ENERGY; ELECTRICAL SHEET RESISTANCE; FACE-CENTERED CUBIC PHASE; HIGH HEATING RATES; IN-SITU; NUCLEATION AND GROWTH; SLOW HEATING RATES; START TEMPERATURE;

CRYSTALLIZATION; ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; GERMANIUM; HEATING; HEATING RATE; TELLURIUM COMPOUNDS;

ACTIVATION ENERGY;

EID: 69149096492     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3129137     Document Type: Article

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