Si2Sb2Te6 phase change material for low-power phase change memory application

Applied Physics Express

Volumn 2, Issue 9, 2009, Pages

  Zhou, Xilin ^a,b   Wu, Liangcai ^a   Song, Zhitang ^a   Rao, Feng ^a   Liu, Bo ^a   Yao, Dongning ^a   Yin, Weijun ^a   Li, Juntao ^a,b   Feng, Songlin ^a   Chen, Bomy ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY TARGET; CHALCOGENIDE RANDOM ACCESS MEMORY; LOW POWER; PHASE CHANGE RANDOM ACCESS MEMORY DEVICES; RESET VOLTAGE; RESISTANCE RATIO; THRESHOLD CURRENTS; VOLTAGE PULSE;

BUOYANCY; DIFFRACTION; HOLOGRAPHIC INTERFEROMETRY; RANDOM ACCESS STORAGE; SILICON; SILICON ALLOYS; TELLURIUM COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 70349154133     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.091401     Document Type: Article

References (13)

1. S. L. Cho, J. H. Yi, Y. H. Ha, B. J. Kuh, C. M. Lee, J. H. Park, S. D. Nam, H. Horii, B. O. Cho, K. C. Ryoo, S. O. Park, H. S. Kim, U.-I. Chung, J. T. Moon, and B. I. Ryu: Symp. VLSI Tech. Dig., 2005, p. 96.
2. J. D. Maimon, K. K. Hunt, L. Burcin, and J. Rodgers: IEEE Trans. Nucl. Sci. 50 (2003) 1878.
3. L. Burcin, S. Ramaswamy, K. K. Hunt, J. D. Maimon, T. J. Conway, B. Li, A. Bumgarner, G. F. Michael, and J. Rodgers: IEEE Aerospace Conf., 2005, p. 1.
4. D. Ielmini, D. Mantegazza, A. L. Lacaita, A. Pirovano, and F. Pellizzer: Solid-State Electron. 49 (2005) 1826.
5. A. L. Lacaita: Solid-State Electron. 50 (2006) 24.
6. N. Yamada, E. Ohno, K. Nishiuchi, and N. Akahira: J. Appl. Phys. 69 (1991) 2849.
7. S. R. Ovshinsky: Phys. Rev. Lett. 21 (1968) 1450.
8. B. Liu, T. Zhang, J. L. Xia, Z. T. Song, S. L. Feng, and B. Chen:Semicond. Sci. Technol. 19 (2004) L61.
9. M. H. R. Lankhorst, B. W. S. M. M. Ketelaars, and R. A. M. Wolters:Nat. Mater. 4 (2005) 347.
10. L. C. Wu, Z. T. Song, F. Rao, Y. F. Feng, B. Liu, L. Y. Wang, W. L. Liu, and S. L. Feng: Appl. Phys. Lett. 93 (2008) 103107.
11. F. Rao, Z. T. Song, L. C. Wu, M. Zhong, and S. L. Feng: Appl. Phys. Lett. 91 (2007) 073505.
12. T. Zhang, Z. T. Song, F. Rao, G. M. Feng, B. Liu, S. L. Feng, and B. Chen: Jpn. J. Appl. Phys. 46 (2007) L247.
13. T. Zhang, Z. T. Song, B. Liu, S. L. Feng, and B. Chen: Solid-State Electron. 51 (2007) 950.