Phase-change memory device using Si-Sb-Te film for low power operation and multibit storage

Journal of Electronic Materials

Volumn 36, Issue 1, 2007, Pages 88-91

  Qiao, Baowei ^a   Feng, Jie ^a   Lai, Yunfeng ^a   Cai, Yanfei ^b   Lin, Yinyin ^b   Tang, Tingao ^b   Cai, Bingchu ^a   Chen, Bomy ^c  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b FUDAN UNIVERSITY   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

Multibit storage; Phase change memory; RESET current; SiSbTe

Indexed keywords

HEXAGONAL PHASES; MULTIBIT STORAGE; PROGRAMMING ENERGIES; RESET/SET RESISTANCE RATIO;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRIC POWER UTILIZATION; SWITCHING SYSTEMS; THIN FILMS;

PHASE CHANGE MEMORY;

EID: 33947511503     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0024-1     Document Type: Article

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