Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process

Scripta Materialia

Volumn 58, Issue 11, 2008, Pages 977-980

  Zhang, Ting ^a,c   Cheng, Yan ^b   Song, Zhitang ^a   Liu, Bo ^a   Feng, Songlin ^a   Han, Xiaodong ^b   Zhang, Ze ^b   Chen, Bomy ^d  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^c UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^d SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

GeSbTe; Phase change material; Phase change memory; SiSbTe

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRIC RESISTANCE MEASUREMENT; PHASE CHANGE MATERIALS; TRANSMISSION ELECTRON MICROSCOPY;

COMPLEX STRUCTURE;

GERMANIUM COMPOUNDS;

EID: 40949157039     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2008.01.048     Document Type: Article

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