Investigation of the optical and electronic properties of Ge 2Sb 2Te 5 phase change material in its amorphous, cubic, and hexagonal phases

Journal of Applied Physics

Volumn 97, Issue 9, 2005, Pages

  Lee, Bong Sub ^a   Abelson, John R ^a   Bishop, Stephen G ^a   Kang, Dae Hwan ^b   Cheong, Byung Ki ^b   Kim, Ki Bum ^c  

^a University of Illinois at Urbana Champaign   (United States)

^b Korea Institute of Science and Technology   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SEMICONDUCTORS; CRYSTALLINE SEMICONDUCTORS; HALL COEFFICIENT; OPTICAL TRANSITIONS;

AMORPHOUS MATERIALS; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; FERMI LEVEL; LIGHT REFLECTION; PHASE TRANSITIONS; PHOTOCONDUCTIVITY; SEMICONDUCTOR MATERIALS;

GERMANIUM COMPOUNDS;

EID: 18844384191     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1884248     Document Type: Article

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