Si1Sb2Te3 phase change material for chalcogenide random access memory

Chinese Physics

Volumn 16, Issue 8, 2007, Pages 2475-2478

  Zhang, Ting ^a,b   Song, Zhi Tang ^a   Liu, Bo ^a   Liu, Wei Li ^a   Feng, Song Lin ^a   Chen, Bomy ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

Chalcogenide random access memory; Phase change; Si Sb Te

Indexed keywords

AMORPHOUS MATERIALS; CHALCOGENIDES; CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; POLYCRYSTALLINE MATERIALS; RANDOM ACCESS STORAGE; SILICON COMPOUNDS;

ANNEALING TEMPERATURE; PHASE CHANGE; THRESHOLD CURRENT;

PHASE CHANGE MATERIALS;

EID: 34548750402     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/16/8/053     Document Type: Article

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