Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory

Applied Surface Science

Volumn 254, Issue 17, 2008, Pages 5602-5606

  Zhang, Yin ^a   Feng, Jie ^a   Zhang, Zufa ^a   Cai, Bingchu ^a   Lin, Yinyin ^b   Tang, Ting'ao ^b   Chen, Bomy ^c  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b FUDAN UNIVERSITY   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

Melting temperature; PRAM; RESET current; Resistivity; Sb2Te3; Silicon doping

Indexed keywords

ANTIMONY COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; PHASE CHANGE MATERIALS; RANDOM ACCESS STORAGE; SILICON;

CRYSTALLINE RESISTIVITY; RESET CURRENT; SILICON DOPING;

THIN FILMS;

EID: 44149084638     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.03.006     Document Type: Article

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