Novel phase-change material GeSbSe for application of three-level phase-change random access memory

Solid-State Electronics

Volumn 54, Issue 4, 2010, Pages 443-446

  Gu, Yifeng ^a,b   Song, Zhitang ^a   Zhang, Ting ^a   Liu, Bo ^a   Feng, Songlin ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

GeSbSe; Phase change material; Phase change memory; Three level data storage

Indexed keywords

ABRUPT DROPS; DATA STORAGE; DATA STORAGE APPLICATIONS; ELECTRICAL RESISTANCES; IN-SITU TEMPERATURE; PHASE-CHANGE RANDOM ACCESS MEMORY; RESISTANCE CHANGE; RESISTANCE STATE; THREE-LEVEL;

DIFFRACTION; GERMANIUM; HOLOGRAPHIC INTERFEROMETRY; RANDOM ACCESS STORAGE;

PHASE CHANGE MEMORY;

EID: 77349087794     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.11.002     Document Type: Article

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