On the crystallization of thin films composed of Sb3.6Te with Ge for rewritable data storage

Journal of Applied Physics

Volumn 95, Issue 9, 2004, Pages 4714-4721

  Kooi, B J ^a   De Hosson, J Th M ^a  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHIZATION; ANISOTROPY; ANNEALING; ANTIMONY COMPOUNDS; CRYSTAL GROWTH; CRYSTALLIZATION; GERMANIUM; NUCLEATION; STRAIN; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON BEAM EVAPORATION; GROWTH ANISOTROPY; GROWTH-DOMINATED CRYSTALLIZATION; TRANSROTATIONAL STRUCTURE;

AMORPHOUS FILMS;

EID: 2442641895     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1690112     Document Type: Article

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