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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 2 A, 2003, Pages 404-408

Nonvolatile memory based on phase change in Se-Sb-Te glass

(9) Nakayama, Kazuya a Kojima, Kazuhiko a Imai, Yutaka a Kasai, Toshihiko a Fukushima, Sanae a Kitagawa, Akio a Kumeda, Minoru a Kakimoto, Yoshio a Suzuki, Masakuni a

a KANAZAWA UNIVERSITY (Japan)

Author keywords

Amorphous semiconductors; Chalcogenide glass; Nonvolatile memory; Phase change; Se Sb Te

Indexed keywords

AMORPHIZATION; AMORPHOUS MATERIALS; CRYSTALLIZATION; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; NONVOLATILE STORAGE; PHASE TRANSITIONS; SEMICONDUCTING SELENIUM COMPOUNDS;

AMORPHOUS SEMICONDUCTORS; CHALCOGENIDE GLASS; ELECTRICAL PULSES; MELTING POINT; NONVOLATILE MEMORY CELLS;

SEMICONDUCTING GLASS;

EID: 0038682134 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.404 Document Type: Article

Times cited : (75)

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