Failure analysis of Ge2Sb2Te5 based phase change memory

Japanese Journal of Applied Physics

Volumn 47, Issue 5 PART 1, 2008, Pages 3372-3375

  Hong, Sung Hoon ^a   Lee, Heon ^a  

^a Korea University   (South Korea)

Author keywords

Delamination; Ge2Sb2Te5; Phase change memory; Reset stuck; Set stuck

Indexed keywords

DELAMINATION; ELECTROLYSIS; FAILURE ANALYSIS; GERMANIUM; MOLYBDENUM; PHASE INTERFACES; QUALITY ASSURANCE; SAFETY FACTOR; SILICON COMPOUNDS; STEEL SHEET; TELLURIUM COMPOUNDS;

DELAMINATED INTERFACES; DIELECTRIC LAYERS; FAILURE MECHANISMS; GE2SB2TE5; PULSED MODE SWITCHING; RESET PULSES; RESET STUCK; RICH PHASES; SET STUCK; THIN LAYERS; WORKING DEVICES;

PHASE CHANGE MEMORY;

EID: 55049141125     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.3372     Document Type: Article

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