Electronic switching effect and phase-change transition in chalcogenide materials

IEEE Electron Device Letters

Volumn 25, Issue 10, 2004, Pages 684-686

  Redaelli, A ^a   Pirovano, A ^b   Pellizzer, F ^b   Lacaita, A L ^a   Ielmini, D ^a   Bez, R ^b  

^a POLITECNICO DI MILANO   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS ALLOYS; CRYSTAL GROWTH; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRONIC STRUCTURE; NONVOLATILE STORAGE;

AMORPHOUS SEMICONDUCTORS; CHALCOGENIDE; NONVOLATILE MEMORIES; PHASE CHANGE MEMORIES; THRESHOLD SWITCHING CURRENT;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 5044241527     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.836032     Document Type: Article

References (15)

1. J. H. Coombs, A. P. J. M. Jongenelis, W. van Es-Spiekman, and B. A. J. Jacobs, "Laser-induced crystallization phenomena in GeTe-based alloys. I. Characterization of nucleation and growth," J. Appl. Phys., vol. 78, pp. 4906-4917, 1995.
2. J. H. Coombs, "Laser-induced crystallization phenomena in GeTe-based alloys. II. Composition dependence of nucleation and growth," J. Appl. Phys., vol. 78, pp. 4918-4928, 1995.
3. 5," Jpn. J. Appl. Phys., vol. 37, pp. 3327-3333, 1998.
4. E. Garcia-Garcia et al., "Optical properties of Ge:Te:Sb ternary alloys," J. Vac. Sci. Technol., vol. 17, pp. 1805-1810, 1999.
5. C. A. Volkert and M. Wuttig, "Modeling of laser pulsed heating and quenching in optical data storage media," J. Appl. Phys., vol. 86, pp. 1808-1816, 1999.
6. S. Lai, "Current status of the phase change memory and its future," in IEDM Tech. Dig., 2003, pp. 255-258.
7. A. Pirovano, A. L. Lacaita, D. Merlani, A. Benvenuti, F. Pellizzer, and R. Bez, "Electronic switching effect in phase-change memory cell," in IEDM Tech. Dig., 2002, pp. 923-926.
8. S. Lai and T. Lowrey, "OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications," in IEDM Tech. Dig., 2001, pp. 803-806.
9. Y. C. Chen et al., "An access-transistor-free (0T/1R) nonvolatile resistance random access memory RRAM using a novel threshold switching, self-rectifying chalcogenide device," in IEDM Tech. Dig., 2003, pp. 905-908.
10. Y. N. Hwang, S. H. Lee, S. J. Ahn, S. Y. Lee, K. C. Ryoo, H. S. Hong, H. C. Koo, F. Yeung, J. H. Oh, H. J. Kim, W. C. Jeong, J. H. Park, H. Horii, Y. H. Ha, J. H. Yi, G. H. Koh, G. T. Jeong, H. S. Jeong, and K. Kim, "Writing current reduction for high-density phase change PRAM," in IEDM Tech. Dig., 2003, pp. 893-896.
11. F. Pellizzer et al., "Novel μtrench phase-change memory cell for embedded and stand-alone nonvolatile memory applications," in Symp. VLSI Tech. Dig., 2004, pp. 18-19.
12. S. R. Ovshinsky, "Reversible electrical switching phenomena in disordered structures," Phys. Rev. Lett., vol. 21, pp. 1450-1453, 1968.
13. D. Adler, M. S. Shur, M. Silver, and S. R. Ovshinsky, "Threshold switching in chalcogenide-glass thin films," J. Appl. Phys., vol. 51, no. 6, pp. 3289-3309, 1980.
14. A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, and R. Bez, "Electronic switching in phase-change memories," IEEE Trans. Electron Devices, vol. 51, pp. 452-459, Mar. 2004.
15. A. Pirovano, A. L. Lacaita, F. Pellizzer, S. A. Kostylev, A. Benvenuti, and R. Bez, "Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials," IEEE Trans. Electron Devices, vol. 51, pp. 714-719, July 2004.