SCOPUS 정보 검색 플랫폼

Volumn 43, Issue 4, 2011, Pages 827-835

Complex interface and growth analysis of single crystalline epi-Si(111)/Y2O3/ Pr2O3/Si(111) heterostructures: Strain engineering by oxide buffer control

(9) Wilke, A a Yang, J M b Kim, J W b Seifarth, O a Dietrich, B a Giussani, A a Zaumseil, P a Storck, P c Schroeder, T a

a IHP (Germany)

b National Nanofabrication Center (NNFC) (South Korea)

c SILTRONIC AG (Germany)

Author keywords

interface; mixed oxides; oxides; RHEED; TEM; XPS

Indexed keywords

INTERFACE; MIXED OXIDES; RHEED; TEM; XPS;

CARRIER MOBILITY; CRYSTALLINE MATERIALS; CRYSTALS; ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL FILMS; EPITAXIAL GROWTH; HETEROJUNCTIONS; LATTICE CONSTANTS; OXIDE FILMS; SILICON; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79952551559 PISSN: 01422421 EISSN: 10969918 Source Type: Journal
DOI: 10.1002/sia.3643 Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.