Structure and defects of epitaxial Si(111) layers on Y2 O3 (111)/Si (111) support systems

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 305-309

  Borschel, C ^a   Ronning, C ^a   Hofsass H ^b   Giussani, A ^c   Zaumseil, P ^c   Wenger, Ch ^c   Storck, P ^d   Schroeder, T ^c  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b UNIVERSITY OF GÖTTINGEN   (Germany)

^c IHP   (Germany)

^d SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DEFECTS; DIFFRACTION; ELECTRON DIFFRACTION; EPITAXIAL LAYERS; HETEROJUNCTIONS; HIGH ENERGY ELECTRON DIFFRACTION; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OZONE WATER TREATMENT; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON;

EPITAXY RELATIONSHIPS; HETEROSTRUCTURE; HETEROSTRUCTURES; HIGH RESOLUTIONS; HIGH-ENERGY ELECTRONS; MICROTWIN; POLE FIGURES; RUTHERFORD BACKSCATTERINGS; SI (1 1 1); SINGLE-CRYSTALLINE; SMOOTH LAYERS; SUPPORT SYSTEMS; SURFACE AND INTERFACES; TRANSMISSION ELECTRONS; X- RAY DIFFRACTIONS; X-RAY REFLECTOMETRY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 59949104417     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3043540     Document Type: Article

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