Dielectric properties of single crystalline PrO2 (111) /Si (111) heterostructures: Amorphous interface and electrical instabilities

Journal of Applied Physics

Volumn 106, Issue 10, 2009, Pages

  Seifarth, O ^a   Walczyk, Ch ^a   Lupina, G ^a   Dabrowski, J ^a   Zaumseil, P ^a   Weidner, G ^a   Mussig H J ^a   Schroeder, T ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS INTERFACES; BAND GAP DIELECTRICS; BAND OFFSETS; BI-LAYER STRUCTURE; C-V MEASUREMENT; ELECTRICAL CHARACTERIZATION; ELECTRICAL INSTABILITY; ELECTRONIC BAND; HETEROSTRUCTURES; INSULATING PROPERTIES; NON DESTRUCTIVE; POST DEPOSITION ANNEALING; POSTDEPOSITION OXIDATION; PR-SILICATES; SI (1 1 1); SINGLE-CRYSTALLINE; TEMPERATURE DEPENDENT; WIDE-BAND-GAP DIELECTRICS; X-RAY REFLECTOMETRY;

ABSORPTION SPECTROSCOPY; AMORPHOUS SILICON; CHARACTERIZATION; CRYSTALLINE MATERIALS; CRYSTALS; DEPTH PROFILING; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; ENERGY GAP; GERMANIUM; OXIDATION; OXYGEN; PHASE INTERFACES; SILICATES; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 71749090805     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3259411     Document Type: Article

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