Epitaxial silicon grown on CeO 2/Si(111) structure by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 5, 1998, Pages 2686-2689

  Jones, J T ^a   Croke, E T ^a,b   Garland, C M ^a,c   Marsh, O J ^a   McGill, T C ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b Hughes Aircraft Co   (United States)

^c Materials Science Department   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000758938     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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