Postdeposition annealing induced transition from hexagonal Pr2 O3 to cubic PrO2 films on Si(111)

Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

  Weisemoeller, T ^a,b   Bertram, F ^a,b   Gevers, S ^a,b   Greuling, A ^a,b   Deiter, C ^a,b   Tobergte, H ^a,b   Neumann, M ^a,b   Wollschlager J ^a,b   Giussani, A ^c   Schroeder, T ^c  

^a UNIVERSITY OF OSNABRÜCK   (Germany)

^b Center of Interface Science   (Germany)

^c IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CUBIC STRUCTURE; HEXAGONAL STRUCTURES; LONG RANGE; PHASE TRANSFORMATION; POST DEPOSITION ANNEALING; SI (1 1 1); SI SUBSTRATES;

ANNEALING; CRYSTAL GROWTH; LATTICE CONSTANTS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MOLECULAR OXYGEN; OXIDE FILMS; PHASE INTERFACES; PRASEODYMIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

OXYGEN VACANCIES;

EID: 67650227680     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3152796     Document Type: Conference Paper

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