Si overgrowth on Y2O3 (1 1 0)/Si (0 0 1) by molecular beam epitaxy

Materials Science and Engineering: B

Volumn 109, Issue 1-3, 2004, Pages 39-41

  Mavrou, G ^a   Vellianitis, G ^a   Apostolopoulos, G ^a   Argyropoulos, K ^a   Dimoulas, A ^a   Scholz, R ^b  

^a INSTITUTE OF MATERIALS SCIENCE   (Greece)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

High k; Metal oxides; Molecular beam epitaxy; Silicon on insulator

Indexed keywords

DEFECTS; METALLIC FILMS; MOLECULAR BEAM EPITAXY; SURFACE ROUGHNESS; THICKNESS CONTROL; YTTERBIUM COMPOUNDS;

HIGH-K; METAL OXIDES; SILICON ON INSULATOR; STRUCTURAL DEFECTS;

SILICON;

EID: 2342596449     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.10.024     Document Type: Conference Paper

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