Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures

New Journal of Physics

Volumn 10, Issue , 2008, Pages

  Schroetter, T ^a   Zaumseil, P ^a   Seifarth, O ^a   Giussani, A ^a   Mussig H J ^a   Storck, P ^b   Geiger, D ^c   Lichte, H ^c   Dabrowski, J ^a  

^a IHP   (Germany)

^b SILTRONIC AG   (Germany)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CORROSION; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC WAVES; EPITAXIAL GROWTH; EPITAXIAL LAYERS; FLOW INTERACTIONS; INTEGRATED CIRCUITS; LIGHT; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON;

AB INITIO CALCULATIONS; CONTROLLED PROPERTIES; DEFECT MECHANISMS; DEFECT PROPERTIES; DIELECTRIC HETEROSTRUCTURE; ELECTROSTATIC INTERACTIONS; EPITAXIAL SILICONS; EPITAXY RELATIONSHIPS; FUNDAMENTAL PHYSICS; GRAZING INCIDENCES; HETERO EPITAXIES; HETEROSTRUCTURE; HETEROSTRUCTURES; HIGH DEFECT DENSITIES; OXIDE HETEROSTRUCTURES; OXIDE SYSTEMS; PROMISING APPROACHES; SEMI-CONDUCTORS; SEMICONDUCTOR LAYERS; SI MATERIALS; SI(111); SINGLE CRYSTALLINE QUALITIES; SMALL POPULATIONS; STACKING CONFIGURATIONS; STACKING SEQUENCES; TWIN FORMATIONS; X-RAY DIFFRACTIONS;

HETEROJUNCTIONS;

EID: 57249114525     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/10/11/113004     Document Type: Article

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