GaN-based microdisk light emitting diodes on (111)-oriented nanosilicon-on-insulator templates

Journal of Applied Physics

Volumn 104, Issue 5, 2008, Pages

  Tripathy, S ^a   Sale, T E ^a   Dadgar, A ^b,c   Lin, V K X ^a   Zang, K Y ^a   Teo, S L ^a   Chua, S J ^a   Blasing J ^b   Krost, A ^b,c  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

^c AZZURRO Semiconductors AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; ETCHING; GALLIUM ALLOYS; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; ION BEAM ASSISTED DEPOSITION; LIGHT; LIGHT EMISSION; LIGHT SOURCES; METAL RECOVERY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; MODEL STRUCTURES; MOSFET DEVICES; NONMETALS; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANIC LIGHT EMITTING DIODES (OLED); OXYGEN; PHOTORESISTS; PLASMA DIAGNOSTICS; PLASMA ETCHING; REFLECTION; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEPARATION; SILICON; STANDARDS; VIDEODISKS;

ALN BUFFER; COMPARATIVE ANALYSIS; CONTACT METALLIZATION; ELECTROLUMINESCENCE (EL); INDUCTIVELY COUPLED PLASMA ETCHING; INGAN/GAN; LIGHT EXTRACTIONS; LINESHAPES; MESA PATTERNS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; MICRO DISKS; MULTIPLE INTERFERENCES; NANO SILICON; REFLECTIVITY ANALYSIS; REFLECTIVITY CHANGES; ROOM TEMPERATURES; SEPARATION-BY-IMPLANTATION-OF-OXYGEN; SI(111); STRUCTURES GROWN; THIN SOI;

LIGHT EMITTING DIODES;

EID: 52049084550     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2973684     Document Type: Article

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