Y2O3 thin films: Internal stress and microstructure

Materials Science and Engineering: B

Volumn 109, Issue 1-3, 2004, Pages 34-38

  Gaboriaud, R J ^a   Paumier, F ^a   Pailloux, F ^a   Guerin, P ^a  

^a Teleport   (France)

Author keywords

Microstructure; Oxide gate; Stress; Thin films; Yttrium oxide

Indexed keywords

ANNEALING; CRYSTALLOGRAPHY; EPITAXIAL GROWTH; FLUORSPAR; ION BEAMS; LAYERED MANUFACTURING; MICROSTRUCTURE; OXIDE MINERALS; RESIDUAL STRESSES; SILICON COMPOUNDS; SPUTTER DEPOSITION; STRESS ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; YTTRIUM COMPOUNDS;

BRAGG PEAKS; ION BEAM DEPOSITION; OXIDE GATE; YTTRIUM OXIDE;

THIN FILMS;

EID: 2342507713     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.10.023     Document Type: Conference Paper

References (15)

1. International Technology Roadmap for Semiconductor 2002: http://public.itrs.net .
2. Wilk G.D., Wallace R.M., Anthony J.M. J. Appl. Phys. 89(10):2001;5243.
3. de Almeida R.M.C., Baumvol I.J.R. Surf. Sci. Rep. 49:2003;1.
4. Zang S., Xiao R. J. Appl. Phys. 83:1998;87.
5. Chambers J.J., Parson G.N. J. Appl. Phys. 90:2001;918.
6. Hubbard K.J., Schlom D.G. J. Mater. Res. 11:1996;2757.
7. Gaboriaud R.J., Pailloux F., Guerin P., Paumier F. Thin Solid Films. 400:2001;106.
8. Dimoulas A., Vellianitis G., Travlos A., Ioannou-Sougleridis V., Nassiopoulou A.G. J. Appl. Phys. 92(1):2002;426.
9. Cho M.H., Ko D.H., Choi Y.G., Jeong K., Lio I.W., Noh D.Y., Kim H.J., Whang C.N. J. Vac. Sci. Technol. A. 19(1):2001;192.
10. Paumier F., Gaboriaud R.J., Kaul A. Cryst. Eng. 5:2002;169.
11. Gaboriaud R.J., Pailloux F., Paumier F. Appl. Surf. Sci. 188:2002;29.
12. D'Heurle F.M., Harper J.M.E. Thin Solid Films. 171:1989;81.
13. J.P. Hirth, L. Lothe, in: Theory of dislocations, McGraw-Hill Publishing Co., 1968.
14. Le Roy Eyring, B. Holmberg, in: Advances in Chemistry, series 39, American Ceramic Society, Washington, DC, 1963, p. 46.
15. Paumier F., Gaboriaud R.J. Thin Solid Films. 441:2003;307.