Electroluminescence characteristics of GaN HEMT at off-state

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1895-1897

  Chen, H ^a   Lai, Z ^a   Kung, S C ^b   Penner, R M ^b   Li, G P ^a  

^a University of California at Irvine   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD DEPENDENCE; GAN HEMTS; ROOM TEMPERATURE; YELLOW BANDS; YELLOW LUMINESCENCE;

ELECTRIC FIELDS; ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LIGHT EMISSION;

LIGHT;

EID: 70449113567     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778494     Document Type: Conference Paper

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