Failure mechanisms in GaN HFETs under accelerated RF stress

2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007

Volumn , Issue , 2007, Pages 99-102

  Conway, A M ^a   Chen, M ^a   Hashimoto, P ^a   Willadsen, P J ^a   Micovic, M ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

Failure mechanisms; GaN; HFET; Life test; Reliability

Indexed keywords

CROSS-SECTIONAL TEM; ELECTRICAL CHARACTERIZATION; FAILURE MECHANISM; GAN; HFET; I-V MEASUREMENTS; LIFE-TESTS; THREE TEMPERATURE;

ACTIVATION ENERGY; DRAIN CURRENT; GALLIUM NITRIDE; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE;

FAILURE (MECHANICAL);

EID: 72449158215     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. M. Micovic, et al, "GaN MMIC Technology for RF and mm-W Applications, " 2005 CSIC.
2. Y-F. Wu, et al, "30-W/mm GaN HEMTs by field plate optimization." IEEE Elec. Dev. Lett., 2004;25:117-9.
3. M. Micovic, et al, "GaN DHFET for RF and mm-W Power Applications, " 2004 IEEE IEDM Dig., IEEE, Dec. 2004.
4. A.M. Conway, et al, "Accelerated RF Life Testing of GaN HFETs, " 2007 IRPS Dig., IEEE, Apr. 2007.