Voltage dependent characteristics of 48V AlGaN/GaN high electron mobility transistor technology on silicon carbide

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2007, Pages 303-306

  Brown, J D ^a   Lee, S ^a   Lieu, D ^a   Martin, J ^a   Vetury, R ^a   Poulton, M J ^a   Shealy, J B ^a  

^a RF MICRO DEVICES   (United States)

Author keywords

FETs; Gallium compounds; Microwave amplifier; Power amplifiers; Scattering parameters; Semiconductor devices

Indexed keywords

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; MICROWAVE AMPLIFIERS; OPTIMIZATION; POWER AMPLIFIERS; SCATTERING PARAMETERS; SEMICONDUCTOR DEVICES; SILICON CARBIDE; VOLTAGE MEASUREMENT;

DRAIN VOLTAGE; FIELD PLATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34748897268     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.380412     Document Type: Conference Paper

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