GaN-on-Si HEMT stress under high electric field condition

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Marcon, Denis ^a,b   Lorenz, Anne ^a,b   Derluyn, Joff ^b   Das, Jo ^b   Medjdoub, Farid ^b   Cheng, Kai ^a,b   Degroote, Stefan ^b   Leys, Maarten ^b   Mertens, Robert ^a,b   Germain, Marianne ^b   Borghs, Gustaaf ^b  

^a Katholieke Universiteit Leuven   (Belgium)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION MECHANISM; DRAIN LEAKAGE CURRENT; DRAIN VOLTAGE; FAILURE MECHANISM; FIELD PLATES; GATE TECHNOLOGY; HIGH CURRENTS; HIGH ELECTRIC FIELDS; HIGH VOLTAGE; IN-SITU; LONG TERM; PRODUCTION COST; T-SHAPED GATE; VOLTAGE CAPABILITY;

DEGRADATION; DRAIN CURRENT; ELECTRIC FIELDS; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; LEAKAGE CURRENTS; SILICON;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 69249236461     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880885     Document Type: Article

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