Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

Microelectronics Reliability

Volumn 49, Issue 5, 2009, Pages 474-477

  Dammann, M ^a   Pletschen, W ^a   Waltereit, P ^a   Bronner, W ^a   Quay, R ^a   Muller S ^a   Mikulla, M ^a   Ambacher, O ^a   van der Wel, P J ^b   Murad, S ^b   Rodle T ^b   Behtash, R ^c   Bourgeois, F ^c   Riepe, K ^c   Fagerlind, M ^d   Sveinbjörnsson, E Ö ^d  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b NXP SEMICONDUCTORS   (Netherlands)

^c United Monolithic Semiconductors GmbH   (Germany)

^d CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; CAPACITANCE VOLTAGES; DEGRADATION MECHANISMS; DRAIN VOLTAGES; GAN LAYERS; LOW FREQUENCIES; NEXT-GENERATION MOBILE COMMUNICATIONS; PASSIVATION LAYERS; RELIABILITY PERFORMANCE; RF STRESS; SIC SUBSTRATES; TEST STRUCTURES;

CELLULAR TELEPHONE SYSTEMS; COMMUNICATION SYSTEMS; DEGRADATION; DRAIN CURRENT; GALLIUM NITRIDE; MOBILE COMPUTING; PASSIVATION; RADIO BROADCASTING; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON NITRIDE; SWITCHING CIRCUITS; TELECOMMUNICATION SERVICES;

EPITAXIAL LAYERS;

EID: 67349212581     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.02.005     Document Type: Article

References (8)

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