The present state of the art of wide-bandgap semiconductors and their future

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2007, Pages 159-162

  Rosker, Mark J ^a  

^a DEFENSE ADVANCED RESEARCH PROJECTS AGENCY   (United States)

Author keywords

GaN; HEMT; MMIC; Power amplifiers; SiC

Indexed keywords

ENERGY GAP; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RELIABILITY THEORY; SEMICONDUCTOR MATERIALS; SILICON CARBIDE;

DEFENSE ADVANCED RESEARCH PROJECTS AGENCY (DARPA); HIGH POWER APPLICATIONS; WIDE BAND GAP SEMICONDUCTORS;

POWER AMPLIFIERS;

EID: 34748830295     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2007.380855     Document Type: Conference Paper

References (1)

1. K. S. Boutrous, and B. Brar, "A study of output power stability of GaN HEMTs on SiC substrates," Reliability Physics Symposium Proceedings, pp. 577-578, April 2004.