Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT's by means of electroluminescence

IEEE Transactions on Electron Devices

Volumn 47, Issue 1, 2000, Pages 2-10

  Meneghesso, Gaudenzio ^a   Grave, Thomas ^b   Manfredi, Manfredo ^b   Pavesi, Maura ^c   Canali, Claudio ^c   Zanoni, Enrico ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b SIEMENS AG   (Germany)

^c UNIVERSITY OF PARMA   (Italy)

Author keywords

Hotelectron; Impact ionization; Ingaas; Light emission

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; HOT CARRIERS; IMPACT IONIZATION; LIGHT EMISSION; MONOCHROMATORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM ARSENIDE; ELECTRON HOLE RECOMBINATION; HOT CARRIER TRANSPORT; MAXWELLIAN DISTRIBUTION; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; RECOMBINATION EMISSION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033909163     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.817561     Document Type: Article

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