Material, process, and device development of GaN-based HFETs on silicon substrates

Proceedings - Electrochemical Society

Volumn 6, Issue , 2004, Pages 405-419

  Johnson, J W ^a   Gao, J ^a   Lucht, K ^a   Williamson, J ^a   Strautin, C ^a   Riddle, J ^a   Therrien, R ^a   Rajagopal, P ^a   Roberts, J C ^a   Vescan, A ^a   Brown, J D ^a   Hanson, A ^a   Singhal, S ^a   Borges, R ^a   Piner, E L ^a   Linthicum, K J ^a  

^a NITRONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYERS; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET); MATERIAL GROWTH; SILICON SUBSTRATES; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE MEASUREMENT; ELECTRON GAS; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROELECTROMECHANICAL DEVICES; PIEZOELECTRICITY; SILICON CARBIDE; SUBSTRATES; WIRELESS TELECOMMUNICATION SYSTEMS;

FIELD EFFECT TRANSISTORS;

EID: 20144388833     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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