SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 158, Issue 2, 2011, Pages

Atomic layer deposition of HfO2, TiO2, and Hf x Ti1-x O2 Using Metal (Diethylamino) Precursors and H2O

(5) Tao, Qian a Kueltzo, Adam a,c Singh, Manish a Jursich, Gregory a,b Takoudis, Christos G a,b

a University of Illinois at Chicago (United States)

b University of Illinois at Chicago (United States)

c Thornton Fractional North High School (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANATASE PHASE; ANNEALED FILMS; FILM COMPOSITION; GRAZING INCIDENCE X-RAY DIFFRACTION; MONOCLINIC PHASE; OVERLAP REGION; PHASE SHIFT INTERFEROMETRY; POST-DEPOSITION; SILICON SUBSTRATES; TEMPERATURE WINDOW; TETRAKIS; TIO; TUNABILITIES; XPS;

AMORPHOUS FILMS; ANNEALING; ATOMIC LAYER DEPOSITION; HAFNIUM COMPOUNDS; TITANIUM; TITANIUM DIOXIDE; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM;

EID: 78650724589 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3522758 Document Type: Article

Times cited : (19)

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