Chemical vapor deposition of Zr x Ti 1-x O 2 and Hf x Ti 1-x O 2 thin films using the composite anhydrous nitrate precursors

Applied Surface Science

Volumn 254, Issue 8, 2008, Pages 2224-2228

  Shao, Qi Yue ^a,b   Li, Ai Dong ^b   Dong, Yan ^a   Fang, Feng ^a   Jiang, Jian Qing ^a   Liu, Zhi Guo ^b  

^a SOUTHEAST UNIVERSITY   (China)

^b NANJING UNIVERSITY   (China)

Author keywords

Anhydrous metal nitrate; CVD; Gate dielectric; Hf x Ti 1 x O 2; Single source precursor; Zr x Ti 1 x O 2

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GATE DIELECTRICS; HEATING; LEAKAGE CURRENTS; PERMITTIVITY; THIN FILMS;

ANHYDROUS METAL NITRATE; MOLAR RATIO; SINGLE-SOURCE PRECURSOR;

ZIRCONIUM COMPOUNDS;

EID: 38749111149     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.08.025     Document Type: Article

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