Effects of aluminum incorporation on hafnium oxide film using plasma immersion ion implantation

Microelectronics Reliability

Volumn 48, Issue 11-12, 2008, Pages 1765-1768

  Sen, Banani ^a   Yang, B L ^a   Wong, Hei ^a   Kok, C W ^a   Chu, P K ^a   Huang, A ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ATOMIC SPECTROSCOPY; CONCENTRATION (PROCESS); CURRENT VOLTAGE CHARACTERISTICS; HAFNIUM; HAFNIUM COMPOUNDS; ION BOMBARDMENT; ION IMPLANTATION; LEAKAGE CURRENTS; LIGHT METALS; OXIDE FILMS; PHOTOELECTRON SPECTROSCOPY; PLASMA APPLICATIONS; PLASMAS; THICK FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM ATOMS; ALUMINUM CONCENTRATIONS; ALUMINUM INCORPORATIONS; BULK OXIDES; CAPACITANCE VOLTAGES; DEPLETION REGIONS; ELECTRICAL CHARACTERISTICS; FLATBAND SHIFTS; HAFNIUM OXIDE FILMS; PLASMA IMMERSION ION IMPLANTATIONS; STEEP TRANSITIONS; SURFACE REGIONS; TRACE AMOUNTS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

ALUMINUM;

EID: 55649093319     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.07.069     Document Type: Article

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